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Aerodynamics and flight mechanics
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High-Power Semiconductor Switches – Multichip Thyristor
High-Power Microwave Metrology
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Image Change Detection for IED Detection
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Research Activities
Aerodynamics and flight mechanics
Detonics
Internal ballistics
Laser sources and their applications
Protection and perforation
High pulsed power technology
Protection of military personnel
Homeland Security
Optronics and sensors
Free-Flight Investigations
Precision-Guided Flying Vehicles
Investigations in Aerodynamics
Nanoenergetics
Nanocarbonaceous Materials with Energetic Techniques
Opto-Pyrotechnical Technology
Spectroscopy - A Helpful Instrument
Semiconductor Technology
Electromagnetic Railguns
High-Power Semiconductor Switches – Multichip Thyristor
High-Power Microwave Metrology
Protection of Military Personnel against Noise and Blast Waves
Night Vision for Security
Laser Neutralization of Explosive Devices
Acoustic Detection and Localization
Countering the Threat from IEDs
Illicit Substance Detection with NQR
THz Spectroscopy and Imaging
Image Change Detection for IED Detection
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High pulsed power techn ...
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Semiconductor Technology
FRANCAIS
DEUTSCH
Aerodynamics and flight mechanics
Detonics
Internal ballistics
Laser sources and their applications
Protection and perforation
High pulsed power technology
> Semiconductor Technology
> Electromagnetic Railguns
> High-Power Semiconductor Switches – Multichip Thyristor
> High-Power Microwave Metrology
Protection of military personnel
Homeland Security
Optronics and sensors
Semiconductor Technology
Purpose
Compact power electronics for (hybrid) electric vehicles
Evaluation of semiconductor devices specially designed for pulsed power applications
Development of silicon carbide (SiC) thyristors with high power density.
Skills
Power semiconductor device physics
Power semiconductor device fabrication technology
Power semiconductor device characterization.
Results
SiC thyristors attain the following characteristics:
Maximum blocking voltage of 4 kV
On-state voltage of 3.9 V (at 100 A/cm
2
)
Current capability of 2 A (350 A/cm
2
)
Turn-on/off time of 210 ns /1 μs
Reverse recovery time of 400 ns.
Facilities
Clean room with photolithography
Metal evaporation tools
Inspection microscope, surface profiler,
SEM, etc.
High/low-temperature and vacuum probing
High-voltage test bench.
Electrical characterization on chip-level
SiC wafer with test structures
SiC thyristor dies
Clean room with mask aligner
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