Purpose

• Compact power electronics for (hybrid) electric vehicles
• Evaluation of semiconductor devices specially designed for pulsed power applications
• Development of silicon carbide (SiC) thyristors with high power density.

Skills

• Power semiconductor device physics
• Power semiconductor device fabrication technology
• Power semiconductor device characterization.

Results

SiC thyristors attain the following characteristics:

• Maximum blocking voltage of 4 kV
• On-state voltage of 3.9 V (at 100 A/cm²)
• Current capability of 2 A (350 A/cm²)
• Turn-on/off time of 210 ns /1 μs
• Reverse recovery time of 400 ns.

Facilities

• Clean room with photolithography
• Metal evaporation tools
• Inspection microscope, surface profiler,
  SEM, etc.
• High/low-temperature and vacuum probing
• High-voltage test bench.