Research Activities
Research Activities
 
FRANCAIS 

DEUTSCH 

High Power Semiconductor Switches – 20 kV IGBT Modules

Purpose


  • High voltage pulsed power applications
  • Demonstration of a compact and modular design
  • Repetitive 1 kHz burst operation

IGBT module, developed in cooperation
with ABB Switzerland Ltd.

IGBT module components

  • Ø 155 mm double-sided pcb
  • 15 IGBT dies with 1,7 kV (ABB 5SMX 12M1701)
  • 15 gate drivers with active clamp circuits
  • Ferrite core for inductively coupled
    triggering

 

High voltage (≤ 50 kV) testing stand
and modules under test in a Teflon
receptacle filled with an insulation liquid
(inset)

Results


Switching of 18 kV (30% safety margin) and 270 A with a single IGBT module


 
Switching of 50 kV and 450 A with three IGBT modules in series connection





Generation of a 1 kHz burst (18 kV, 270 A, 1% duty cycle) for 20 ms









 
© ISL